Sensor array with anticoupling layer between data lines and char

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257233, 257291, 257292, 257446, 257448, H01L 3100

Patent

active

057708711

ABSTRACT:
A sensor array has cells, each with a sensing element and a switching element. The sensing element includes a charge collection electrode. An anticoupling layer between the charge collection electrodes and the data lines is structured to reduce capacitive coupling between the electrodes and the data lines below a threshold level at which crosstalk is unacceptable. If charge collection electrodes overlap data lines, the anticoupling layer can reduce capacitive coupling so that crosstalk is no greater than 2%. The anticoupling layer can be a dielectric layer with dielectric constant less than 6 and with thickness greater than 1.5 .mu.m, with the dielectric constant being sufficiently low and the thickness sufficiently great that the anticoupling layer reduces capacitive coupling below the threshold level. Or the anticoupling layer can include a fixed potential sublayer of conductive material, electrically connected to circuitry that holds it at a fixed potential; the fixed potential sublayer therefore reduces capacitive coupling below the threshold level.

REFERENCES:
patent: 5557534 (1996-09-01), Wu
patent: 5600155 (1997-02-01), Wu
patent: 5610404 (1997-03-01), Possin

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