Resonant tunneling hot electron device

Details Resonant tunneling hot electron device Resonant tunneling hot electron device

1996-09-23

1998-06-23

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

057708690

ABSTRACT:
A resonant tunneling hot electron device uses an interband tunneling double barrier structure as an electron injection layer and is capable of increasing PVR and peak current using an enhanced resonant interband tunneling effect through alignment of a hole confined state and an electron confined state by a Stark shift effect. It includes a conductive collector layer formed on a substrate; a conductive base layer having a conduction band minimum lower than that of the emitter barrier layer and the collector barrier layer and having high electron mobility; a collector barrier layer formed between the base layer and the collector layer; and an electron injection electron barrier layer of an enhanced interband resonant tunneling quantum well broken band gap heterostructure formed between the emitter layer and the base layer. This structure exploits an enhanced resonant tunneling effect due to alignments of quantum confined states by Stark shifts.

REFERENCES:
patent: 5031013 (1991-07-01), Choi
Journal of Applied Physics, vol. 68, No. 6, 15 Sep. 1990, "Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb", Luo et al.
Applied Physics Letter 51, 28 Sep. 1987, "Room-temperature operation of hot-electron transistors", Levi et al.
Applied Physics Letter 69(14), 30 Sep. 1991, "Thermionic emission of and L electrons in the GaSb/InAs hot-electron transistors", Funato et al.
Kim et al, "Enhancement of Resonant Tunneling Current at Room Temperature", J. Appl. Phys. 81 (10), 15 May 1997, pp. 7070-7072.

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