Charged particle beam projection apparatus

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250396R, H01J 3700

Patent

active

057708630

ABSTRACT:
In a charged particle beam projection apparatus in which a plurality of areas are defined in a mask and a pattern in each area is projected in a corresponding area on a substrate such as a semiconductor wafer or the like, in order to reduce aberration caused by magnetic lens or deflectors when projecting the mask pattern onto the substrate, the positioning and dimensions of these magnetic lenses or the deflectors are set so that specific relationships are achieved, or a distortion in the mask pattern projected on the substrate is corrected in correspondence to the partitioned areas on the mask pattern.

REFERENCES:
patent: 4198569 (1980-04-01), Takayama
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4980567 (1990-12-01), Yasuda et al.
patent: 5047647 (1991-09-01), Itoh et al.
patent: 5631113 (1997-05-01), Satoh et al.

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