Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1976-07-27
1978-02-07
Tupman, W.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29569L, 29590, B01J 1700
Patent
active
040719456
ABSTRACT:
A method for manufacturing a semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of opposite types of conductivity. The silicon carbide crystal also has an additional region with structure defects which are clusters with a concentration of 10.sup.19 cm.sup.-3 to 10.sup.22 cm.sup.-3, that region adjoining the second ohmic contact and having a thickness greater than that of the p-type region by at least 0.05 m.mu.. The method is characterized in that, in order to produce the additional region, the p-type region is bombarded with ions of an inert gas with an ion flow density of 3.1.multidot.10.sup.13 ion/cm.sup.2 .multidot.sec to 1.25.multidot.10.sup.14 ion/cm.sup.2 .multidot.sec, an ion energy of 10 to 400 keV and an irradiation dose of 1.2.multidot.10.sup.16 ion/cm.sup.2 to 6.2.multidot.10.sup.17 ion/cm.sup.2.
REFERENCES:
patent: 3629011 (1971-12-01), Tohi
patent: 3773566 (1973-11-01), Tsuchimoto
patent: 3966501 (1976-06-01), Nomura
Judin Vladimir V.
Karatsjuba Anatoly P.
Kmita Tatyana G.
Kruglov Igor I.
Kurinny Vladimir I.
LandOfFree
Method for manufacturing a semiconductor display device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor display device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor display device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1394980