Non-volatile semiconductor memory capable of erase- verifying me

Details Non-volatile semiconductor memory capable of erase- verifying me Non-volatile semiconductor memory capable of erase- verifying me

1996-03-11

1997-01-14

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

3651853, 36518533, 3651852, 365236, 365201, 3652257, 36518509, G11C 1604

Patent

active

055946895

ABSTRACT:
A flash memory having a defective count circuit. In an erasing operation, when an erase and an erase verify are repeatedly performed, the defective count circuit counts the number of unerased memory cells having a slow erase speed, in the course of the erase verify. If the counted number of the unerased memory cells becomes higher than a predetermined number, the erase verify is stopped, and the erase is performed again. On the other hand, if the counted number of the unerased memory cells is not higher than a predetermined number, the erasing operation is completed. Therefore, most of memory cells excluding a small number of memory cells having slow erase speed are properly erased with no over-erasing.

REFERENCES:
patent: 5327384 (1994-07-01), Ninomiya
patent: 5532959 (1996-07-01), Ninomiya et al.

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