Method of preparing single crystalline cubic silicon carbide lay

Details Method of preparing single crystalline cubic silicon carbide lay Method of preparing single crystalline cubic silicon carbide lay

1984-08-22

1985-12-03

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148DIG148, 156610, 156611, 156613, 156DIG64, 423345, H01L 21205, H01L 2904

Patent

active

045564361

ABSTRACT:
A method of making very pure cubic silicon carbide, SiC, comprising the steps of: loading a first inner graphite cup of a Lely type furnace while cold with a large number of crystals of SiC that are used as substrates; sealing the first cup with a graphite lid; inserting the first cup into a second graphite cup and inserting them into the furnace; filling the area between the first cup and the second cup with SiC; heating the first cup to between 2300.degree. C. and 2700.degree. C. until an atmosphere saturated with Si, C, SiC.sub.2 and Si.sub.2 C is created; and cooling the furnace quickly to a temperature less than 1800.degree. C.

REFERENCES:
patent: 2854364 (1958-09-01), Lely
patent: 3129125 (1964-04-01), Hamilton
patent: 3147159 (1964-09-01), Lowe
patent: 3228756 (1966-01-01), Hergenrother
patent: 3236780 (1966-02-01), Ozarow
patent: 3275415 (1966-09-01), Chang et al.
patent: 3458779 (1969-07-01), Blank et al.
Kroko, L. J., "Growth Studies of Silicon Carbide Crystals", J. Electrochem. oc., vol. 113, No. 8, Aug. 1966, pp. 801-808.
Knippenberg, W. F., "Growth Phenomena in Silicon Carbide", Philips Research Reports, vol. 18, No. 3, Jun. 1963, pp. 1, 176-179, 244-273.

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