Silicon photodiode with n-type control layer

Details Silicon photodiode with n-type control layer Silicon photodiode with n-type control layer

1984-04-26

1985-02-12

James, Andrew J.

357 58, 357 91, 357 52, H01L 2714

Patent

active

044994834

ABSTRACT:
A p-.nu.-n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance.
The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a .nu.-type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.

REFERENCES:
patent: 3378915 (1968-04-01), Zenner
patent: 3512056 (1970-05-01), Chu et al.

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