Semiconductor device having a via hole with an aspect ratio of n

Details Semiconductor device having a via hole with an aspect ratio of n Semiconductor device having a via hole with an aspect ratio of n

1995-04-20

1997-01-14

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257764, 257915, 257758, H01L 23522, H01L 2941, H01L 2943

Patent

active

055942784

ABSTRACT:
A semiconductor device includes an inter-level insulating film formed on a semiconductor substrate. Wiring layers are formed at different depths inside the interlevel insulating film. Open aperture portions have different depths and are formed in the inter-level insulating film so as to reach each of the wiring layers. A titanium nitride film (first conductor layer) is formed on the inner surface of each of the open aperture portions and on the inter-level insulating film. A silicon oxide film (insulating film) is formed on the titanium nitride film and hardly on the inner surface of each of the open aperture portions. A tungsten film (second conductor layer) is formed inside each of the open aperture portions. An aluminum wiring (third conductor layer) is formed on the tungsten film.

REFERENCES:
patent: 4767724 (1988-08-01), Kim et al.
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5272110 (1993-12-01), Koyama

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