Semiconductor memory having subarrays and partial word lines

Details Semiconductor memory having subarrays and partial word lines Semiconductor memory having subarrays and partial word lines

1985-04-04

1987-09-15

Hecker, Stuart N.

Static information storage and retrieval

Addressing

365190, G11C 800

Patent

active

046944338

ABSTRACT:
A memory structure for very large memory arrays on a chip is described where the memory array is divided into a number of subarrays. The subarrays are controlled via common word decoders and subarray decoders. The word lines of the individual subarrays are individually selectable through word line switches, and the bit lines of the subarrays are applied directly to a common line system, and interconnected in such a manner that the peripheral circuits, e.g. the data input and output circuits, can be arranged in practically any free location on the chip.

REFERENCES:
patent: 3959781 (1976-05-01), Mehta et al.
patent: 4090255 (1978-05-01), Berger et al.
patent: 4222112 (1980-09-01), Clemons et al.
patent: 4266283 (1981-05-01), Perlegos et al.
patent: 4527256 (1985-07-01), Giebel
patent: 4596000 (1986-06-01), Wiedmann
Buscaglia, "Write Select Scheme for Schottky Coupled Cell with Early Upper Word Line Deselect", IBM Tech. Disc. Bulletin, vol. 26, No. 7B, Dec. 1983, pp. 3630-3631.
Baier et al., "A 256K NMOS DRAM", IEEE ISSCC Digest of Technical Papers, 2-24-84, pp. 274-275, 353.
Patent Abstracts of Japan, vol. 4, No. 172 (P-38) Nov. 27, 1980; JP A 55 117 786 (Matsushita Denki Sangyo K.K.) 10-09-1980.
Patent Abstracts of Japan, vol. 5, No. 41 (P-56, Apr. 11, 1981; (Hitachi Seisakusho K.K.) 24-01-1981.
IBM Technical Disclosure Bulletin, vol. 13, No. 7, Dec. 1970, pp. 1927-1928, by N. F. Brickman, "Large Scale Integration".
Electrical Design News, vol. 17, No. 10, May 15, 1972, pp. 60-61, D. Pearson--"How to Tailor Your Memory Needs with a Minimum of External Parts".

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