Semiconductor device having bipolar transistor and integrated in

Details Semiconductor device having bipolar transistor and integrated in Semiconductor device having bipolar transistor and integrated in

1985-07-17

1987-09-15

Larkins, William D.

357 50, 357 55, 357 89, 357 92, H01L 2704, H03K 19091

Patent

active

046943218

ABSTRACT:
A semiconductor integrated circuit device incorporating bipolar transistors and IILs comprises respective buried layers in a substrate and active regions. A buried layer formed in the IIL region has a larger Gummel number than that of a buried layer formed in the bipolar transistor region so that a leakage current to the substrate is prevented. A larger Gummel number of the buried layer is accomplished by increasing the impurity concentration or the thickness of the layer. The device structure allows an enhanced circuit packing density, while suppressing a leakage current to the substrate.

REFERENCES:
patent: 4157268 (1979-06-01), Bergeron et al.
patent: 4258379 (1981-03-01), Watanabe
patent: 4420874 (1983-12-01), Funatsu

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