1984-12-05
1987-09-15
Davie, James W.
357 4, 357 16, 357 90, H01L 2714, H01L 3100
Patent
active
046943188
ABSTRACT:
A structure having a sawtooth graded bandgap region between two layers having the same conductivity type is useful as a photodetector.
REFERENCES:
patent: 4353081 (1982-10-01), Allyn et al.
patent: 4383269 (1983-05-01), Capasso
patent: 4476477 (1984-10-01), Capasso et al.
patent: 4486765 (1984-12-01), Capasso
patent: 4590507 (1986-05-01), Capasso et al.
"Enhancement of Electron Impact Ionization in a Superlattice: A New Avalanche Photodiode with a Large Ionization Rate Ratio", Applied Physics Letters, 40(1), Capasso et al., (1982) pp. 38-40.
"Staircase Solid-State Photomultipliers and Avalanche Photodiodes with Enhanced Ionization Rates Ratio", IEEE Transactions on Electron Devices, vol. ED-30, No. 4, Capasso et al., (1983) pp. 381-390.
"Planar-Doped Barriers in GaAs by Molecular Beam Epitaxy", Electronics Letters, vol. 16, No. 22, Malik et al., (1980) pp. 836-837.
Capasso Federico
Tsang Won-Tien
American Telephone and Telegraph Company AT&T Bell Laboratories
Businger Peter A.
Davie James W.
Epps Georgia Y.
Laumann Richard D.
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