Conductivity modulated semiconductor structure

Details Conductivity modulated semiconductor structure Conductivity modulated semiconductor structure

1985-02-19

1987-09-15

Carroll, J.

357 15, 357 41, 357 46, 357 86, H01L 2948, H01L 2978, H01L 2702

Patent

active

046943137

ABSTRACT:
An insulated gate field effect transistor having a minority carrier diode and a majority carrier diode formed in the drain region. The minority diode modulates the resistance of the drain while the majority diode decreases sensitivity to latch up. Alternatively, a minority diode only is formed in the drain and separated from the drain contact and source by the body and body contact. An improved SCR is formed using the two diode structures as the fourth layer. An improved diode can also be formed having both low turn-on and low series resistance.

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