Non-single-crystal semiconductor light emitting device

Details Non-single-crystal semiconductor light emitting device Non-single-crystal semiconductor light emitting device

1986-03-24

1987-09-15

Davie, James W.

357 2, 357 4, 357 58, 357 59, H01L 3300

Patent

active

046943129

ABSTRACT:
A non-single-crystal semiconductor light emitting device comprising a first non-single-crystal semiconductor layer of a first conductivity type; a non-single-crystal semiconductor intrinsic region formed in layers on the first non-single-crystal semiconductor layer; a second non-single-crystal semiconductor layer of a second conductivity type reverse from the first conductivity type formed on said non-single-crystal semiconductor intrinsic region; wherein the intrinsic region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m(where m.gtoreq.3) of third non-single-crystal semiconductors layers M.sub.1, M.sub.2 . . . and M.sub.m sequentially laminate in this order, and wherein the energy gaps Eg.sub.1, Eg.sub.2, . . . and Eg.sub.m of the third non-single-crystal semiconductor layers bear such relationships as Eg.sub.1 >Eg.sub.2 <Eg.sub.3, Eg.sub.3 >Eg.sub.4 <Eg.sub.5, . . . Eg.sub.(m-2) >Eg.sub.(m-1) <Eg.sub.m.

REFERENCES:
patent: 4527179 (1985-07-01), Yamazaki
patent: 4546480 (1985-10-01), Burnham et al.
Boburka et al., "GaAlAs Negative Resistance Light-Emitting Diode," IBM Technical Disclosure Bulletin, vol. 16, No. 2, Jul. 1973, p. 554.

Affiliated with

Also associated with

Rating

Non-single-crystal semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-single-crystal semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-single-crystal semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1388773