Bulk avalanche semiconductor laser

Details Bulk avalanche semiconductor laser Bulk avalanche semiconductor laser

1987-10-13

1990-01-02

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 49, H01S 319

Patent

active

048918156

ABSTRACT:
A bulk semiconductor laser which uses optically triggered avalanche conduction to initiate the lasing action in the bulk. A semiconductor block has electrodes coupled on opposing sides and a high voltage is applied across the electrodes which is less than the voltage required for avalanche breakdown. The block is irradiated with light which produces charge carriers in the block to initiate avalanche conduction, which results in a large number of charge carriers. The charge carriers recombine to generate a second amount of electromagnetic radiation. This radiation is reflected back into the block on two opposing sides, thus resulting in a laser emission.

REFERENCES:
patent: 3510795 (1970-05-01), Winstel
patent: 3872400 (1975-03-01), Glausecker et al.
patent: 3886579 (1975-05-01), Ohuchi et al.
patent: 3953809 (1976-04-01), Kawamoto et al.
patent: 4218618 (1980-08-01), Mourou
patent: 4301362 (1981-11-01), Mourou
patent: 4316156 (1982-02-01), Scifres et al.
patent: 4347437 (1982-08-01), Mourou
patent: 4368385 (1983-01-01), Kanbe et al.
patent: 4438331 (1984-03-01), Davis
patent: 4555785 (1985-11-01), Scifres et al.
patent: 4782222 (1988-11-01), Ragle et al.
Roxlo et al.; "Turnable . . . Platelet Laser", Appl. Phys. Lett., 38 (7); Apr. 1, 1961; pp. 507-509.
Weiser et al.; "Evidence for Avalanche . . . P-Type GaAs"; Appl. Phys. Lett., 7(8); Oct. 15, 1965; pp. 225-228.
Southgate; "Recombination Processes . . . Gallium Arsenide"; J. of Appl. Phys., 38(12); Nov. 1967; pp. 4589-4595.
"Optically Pumped Room-Temperature GaAs Lasers", Stephen R. Chinn et al., IEEE Journal of Quantum Electronics, vol. QE-9, No. 2, Feb. 1973; pp. 294-300.
"Optically Excited Bulk Semiconductor Lasers", Carl J. Magee et al., IEEE Journal of Quantum Electronics, vol. QE-6, No. 6, Jun. 1970; pp. 392-400.
"Stimulated Emission from Bulk Field-Ionized GaAs", P. D. Southgate, IEEE Journal of Quantum Electronics, vol. QE-4, No. 4, Apr. 1968; pp. 179-185.
"Laser Action in Field-Ionized Bulk GaAs*", P. D. Southgate, Applied Physics Letters, vol. 12, No. 3, Feb. 1, 1968; pp. 61-63.

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