Method of making a semiconductor device having floating source a

Details Method of making a semiconductor device having floating source a Method of making a semiconductor device having floating source a

1993-11-30

1997-01-14

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 56, 437 90, H01L 21265, H01L 2170, H01L 2700, H01L 2120

Patent

active

055939287

ABSTRACT:
The present invention relates to a MOS transistor having floating source regions and floating drain regions.
An epitaxial layer is grown on the channel regions of a semiconductor substrate in such a manner that the surface of the epitaxial layer makes a plane together with the upper surface of field oxide films, thereby enabling steps to be reduced.
A polysilicon film is filled in recess regions formed by the growth of epitaxial layer and impurity-ions are implanted into the polysilicon film to form floating source regions and a floating drain regions.
A buried oxide film is formed such a manner that it encloses the polysilicon film filled in the recess regions to prevent the junction leakage and to improve the characteristic of insulation.

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patent: 5191397 (1993-03-01), Yoshida
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