SOI trench DRAM cell for 256 MB DRAM and beyond

Details SOI trench DRAM cell for 256 MB DRAM and beyond SOI trench DRAM cell for 256 MB DRAM and beyond

1994-10-06

1997-01-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, H01L 218242

Patent

active

055939120

ABSTRACT:
A trench SOI structure is described. The structure is useful, for instance in the fabrication of DRAM cells. The structure can be fabricated by extending the conventional substrate plate trench cell. The SOI cell eliminates the parasitic trench sidewall leakage, reduces soft errors, eliminates well to substrate leakage, in addition to all the other advantages of SOI devices.

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N.C.C. Lu et al, IEEE J. Solid-State Circuits V. SC-21 (1986) p. 627 "A Substrate-Plate Trench-Capacitor (SPT) Memory Cell for Dynamic RAMS".

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