Semiconductor sensor having a protective layer

Details Semiconductor sensor having a protective layer Semiconductor sensor having a protective layer

1995-05-03

1997-05-13

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257417, 257418, 257419, 257 77, 73720, 73721, 73726, 73727, H01L 2982

Patent

active

056295383

ABSTRACT:
A semiconductor chip, which is preferably designed as a pressure sensor, has on its rear side one or more depressions in which the pressure is measured by correspondingly designed diaphragms which are coupled to piezosensitive circuits. The surface of the depressions and, optionally, the rear side of the semiconductor chip are coated with a protective layer which ensures that the semiconductor is protected from aggressive media. The protective layer thereby makes it possible to use the sensor universally in acids, lyes or hot gases.

REFERENCES:
patent: 3819431 (1974-06-01), Kurtz et al.
patent: 4671846 (1987-06-01), Shimbo et al.
patent: 5296730 (1994-03-01), Takano et al.
patent: 5408885 (1995-04-01), Araki

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