Semiconductor device

Details Semiconductor device Semiconductor device

1994-11-30

1997-05-13

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257378, H01L 2710

Patent

active

056295375

ABSTRACT:
A semiconductor device has a plurality of basic cells fabricated on a single semiconductor substrate. Each of the basic cells comprises a first-conduction-type FETs, a second-conduction-type FETs, and a bipolar transistor. The collector region of the bipolar transistor is formed in a well region where the first-conduction-type FETs are formed. The bipolar transistor is formed between the first-conduction-type FETs of adjacent ones of the basic cells separated by an element insulation film.

REFERENCES:
patent: 4884115 (1989-11-01), Michel et al.
patent: 4920164 (1990-04-01), Tanizawa
patent: 5049967 (1991-09-01), Watanabe et al.
IBM Technical Disclosure Bulletin, vol. 19, No. 11, Apr. 1977 pp. 4191-4192.
IEEE Journal of Solid-State Circuits vol. 8, No. 1 Feb. 1990, pp. 142-148.
T. Hanibuchi, et al., "A Bipolar-PMOS Merged Basic Cell for 0.8.mu.m BiCMOS Sea-of-Gates", IEEE 1990, Custom Integrated Circuits Conference, pp. 4.2.1-4.2.4.
H. Momose, et al., "Characterization of Speed and Stability of BiNMOS Gates with a Bipolar and PMOSFET Merged Structure", IEEE, 1990, pp. 9.6.1-9.6.4.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1387309