Patent
1983-12-01
1990-01-02
Sikes, William L.
357 45, H01L 2714, H01L 3100
Patent
active
048916820
ABSTRACT:
A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel region formed by an n.sup.- epitaxial layer grown on the substrate, a ring-shaped p+ gate region formed in a surface of the epitaxial layer, an n+ source region formed in a part of the surface of the epitaxial layer surrounded by the ring-shaped gate region and a p+ overflow drain region formed in the surface of the substrate underneath the gate region. By adjusting a time duration of a shutter control signal having a positive voltage applied to the overflow drain region, a time period during which photocarriers, i.e. electrons are flown into the gate region and stored therein, can be controlled at will, and an electronic shutter function can be achieved.
REFERENCES:
patent: 3931463 (1976-01-01), Levine
patent: 4377817 (1983-03-01), Nishizawa et al.
patent: 4467341 (1984-08-01), Suzuki
"Static Induction Transistor Image Sensors"; IEEE Transactions on Electron Devices, vol. ED-26, No. 12, Dec., 1979.
Mizusaki Takashi
Nishizawa Jun-ichi
Tamamushi Takashige
Yamada Hidetoshi
Yusa Atsushi
Olympus Optical Co,. Ltd.
Sikes William L.
Wise Robert E.
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