Method for manufacturing a substrate for semiconductor device us

Details Method for manufacturing a substrate for semiconductor device us Method for manufacturing a substrate for semiconductor device us

1994-01-21

1996-04-09

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

148DIG24, H01L 21306

Patent

active

055061559

ABSTRACT:
It is an object of the present invention to provide a method for manufacturing a substrate for a semiconductor device which can increase efficiency of production of the substrate for a semiconductor device, and a method for manufacturing a substrate which can be utilized to produce a highly integrated semiconductor device. A polysilicon layer is formed on both the top surface and the bottom surface of the wafer (see FIG. 4B), before removing the polysilicon layer from the top surface of the wafer (see FIG. 4C). The polysilicon layer which remains on the bottom surface of the wafer is selectively removed, except in the device formation region (see FIG. 4D). Impurities (such as Fe or the like) contained in the wafer are trapped in distortion ST50 and distortion ST60 which occur between the wafer and the polysilicon layer. Since the polysilicon layer is formed separately on the bottom surface of the wafer, the tensile stress of the polysilicon layer is released. As a result, the wafer experiences less curvature, and it is possible to manufacture a substrate for the semiconductor device which can increase efficiency of production.

REFERENCES:
patent: 4559086 (1985-12-01), Hawkins
patent: 4561171 (1985-12-01), Schlosser
patent: 4597166 (1986-07-01), Iwai
patent: 5250445 (1993-10-01), Bean et al.

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