Method of forming a nonsilicon semiconductor on insulator struct

Details Method of forming a nonsilicon semiconductor on insulator struct Method of forming a nonsilicon semiconductor on insulator struct

1988-11-29

1990-01-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437974, 437228, 437 83, 437 86, 437131, 437132, 437133, 148DIG59, 148DIG135, 148DIG12, 148 333, 148 334, H01L 750

Patent

active

048913294

ABSTRACT:
A method of forming a nonsilicon semiconductor layer on an insulating layer by forming a thin heteroepitaxial layer of nonsilicon semiconductor on a first substrate having a lattice structure which matches that of the heteroepitaxial layer. A first insulating layer is formed on the heteroepitaxial layer. A second insulating layer is formed on the surface of a second substrate. The first and second insulating layers are bonded together to form a unified structure, and the first substate is etched away. In a preferred embodiment the heteroepitaxial layer is germanium, gallium arsenide or silicon-germanium alloy while the first substrate is silicon, germanium, gallium arsenide or silicon-germanium alloy.

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