Method for manufacturing field effect transistor

Details Method for manufacturing field effect transistor Method for manufacturing field effect transistor

1988-08-03

1990-01-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, 437 52, 437 60, 437 48, 357 236, 357 239, 357 51, H01L 2704, H01L 2978

Patent

active

048913278

ABSTRACT:
Impurities of a conductivity type opposite to a semiconductor substrate are ion-implanted utilizing as a mask a resist or the like formed on the major surface of the semiconductor substrate. Impurity regions spaced apart from each other by a predetermined distance are formed by heat treatment. Conductive layers are formed over the respective impurity regions. A conductive material is formed on an exposed semiconductor substrate through an oxide film to cover the conductive layers, and patterned in a predetermined shape. In addition, conductive layers spaced apart form each other by a predetermined distance are formed on the major surface of the semiconductor substrate. Impurities of the conductivity type opposite to that of the semiconductor substrate are ion-implanted into the conductive layers. The impurities included in the conductive layers are diffused into the semiconductor substrate by heat treatment, so that impurity regions spaced apart from each other by a predetermined distance are formed. A conductive material is formed on the exposed semiconductor substrate through an oxide film to cover the conductive layers, and patterned in a predetermined shape.

REFERENCES:
patent: 4183040 (1980-01-01), Rideout
patent: 4240845 (1980-12-01), Esch et al.
patent: 4505023 (1985-03-01), Tseng et al.
patent: 4735915 (1988-04-01), Kita et al.
IBM Technical Disclosure Bulletin, vol. 18, No. 4, Sept. 1975, pp. 1019-1020.
VSLI Technology, Section 6.5.5, pp. 249-250, 1983, by S. M. Sze.
Koyanagi et al., "Novel High Density, Stacked Capacitor MOS RAM" IEDM 1978: 348,351.

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