Method of making devices in silicon, on insulator regrown by las

Details Method of making devices in silicon, on insulator regrown by las Method of making devices in silicon, on insulator regrown by las

1985-10-04

1987-09-15

Roy, Upendra

Fishing, trapping, and vermin destroying

357 42, 357 91, 437 56, H01L 21263, H01L 21225

Patent

active

046937587

ABSTRACT:
This invention relates to improvements in the SOS technology including the so-called laser annealing processing. According to this invention, a semiconductor layer of an SOS structure consists of the three layers of an interface layer made up of twins, a seed crystalline layer and a re-grown layer far thicker than the preceding two layers when viewed from the side of an insulating substrate. The re-grown layer is formed in such a way that a semiconductor layer deposited on the insulating substrate is irradiated with an electromagnetic wave, for example, pulsed ruby laser beam, which is absorbed substantially uniformly by a portion except the interface layer and the seed crystalline layer. According to this invention, the quality of the re-grown layer is improved, and the mobility of carriers is enhanced. As a result, the operating speed of a semiconductor device employing the SOS structure is raised, and the leakage current is reduced.

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