Method of producing a semiconductor memory device

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

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Details

29577C, 357 2312, H01L 2978, H01L 2960

Patent

active

046271538

ABSTRACT:
A static RAM using a flip-flop circuit as a memory cell is disclosed. The gate oxide film of the MOS transistor for selecting the memory cell is thicker than the gate oxide film of the MOS transistor included in the peripheral circuit of the memory matrix.

REFERENCES:
patent: 4183093 (1980-01-01), Kawagoe

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