Semiconductor laser device having plurality of layers for emitti

Details Semiconductor laser device having plurality of layers for emitti Semiconductor laser device having plurality of layers for emitti

1990-03-27

1991-07-16

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 23, 372 46, H01S 319

Patent

active

050330535

ABSTRACT:
A semiconductor laser device capable of emitting lights of different wavelengths has a substrate, a first light-emitting layer provided on the substrate, and a second light-emitting layer provided on the substrate and having a greater band gap than the first light-emitting layer. A barrier layer is disposed between the first and second light-emitting layers. The barrier layer has a band gap greater than those of the first and second light-emitting layers. The band gap and the thickness of the barrier layer are determined to be large enough to create, in response to injection of carriers to the light-emitting layers, a state in which the carrier density in the second light-emitting layer is made higher while the carrier density in the first light-emitting layer is made lower than those which would be obtained when the barrier layer is omitted. The device further has a pair of cladding layers sandwiching therebetween the first light-emitting layer, the barrier layer and the second light-emitting layer, the cladding layers having smaller refractive index values than the first and second light-emitting layers. The device further has electrodes for supplying electrical currents to the first and second light-emitting layers.

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Journal of Applied Physics, vol. 64(3), pp. 1022-1026, Mar. 15, 1980, "Emission Spectra of Single Quantum Well Lasers with Inhomogeneous Current Injection".
Applied Physics Letters, vol. 36(6), pp. 441-443, "CW Multiwavelength Transverse-Junction-Stripe Lasers Grown by Molecular Beam Epitaxy Operating Predominantly in Single-Longitudinal Modes".

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