Semiconductor device having trench structure for element isolati

Details Semiconductor device having trench structure for element isolati Semiconductor device having trench structure for element isolati

1994-06-13

1995-12-05

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257513, 257398, H01L 2906

Patent

active

054731860

ABSTRACT:
A semiconductor device has a nobel configuration. The device includes a semiconductor substrate, element isolation regions formed on the main surface of the semiconductor substrate and at least one element region formed on the main surface of the semiconductor substrate and enclosed by the element isolation regions. In the device, the depth of each trench from the main surface to the bottom of the semiconductor substrate is shallow at a region where the trench width is less than a specified length, and it is deep at a region where the trench width is larger than the specified length.

REFERENCES:
patent: 4491486 (1985-01-01), Iwai
patent: 5298450 (1994-03-01), Verret

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