Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1992-10-21
1994-10-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 4, 257 40, H01L 4902
Patent
active
053592042
ABSTRACT:
A switching device is characterized by having periodical layer structure of an organic insulator between a pair of electrodes and having memorizability with respect to switching characteristic. The layer structure is formed of an amphiphilic compound according to the LB method.
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Eguchi Ken
Hamamoto Takashi
Kawada Haruki
Kuribayashi Masaki
Matsuda Hiroshi
Canon Kabushiki Kaisha
Crane Sara W.
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