Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-07-17
1999-06-29
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 89, 438693, H01L 21302
Patent
active
059168196
ABSTRACT:
A planarization method including the provision of a wafer having a wafer surface. A pad is positioned for contact with the wafer surface and the wafer surface is planarized using the pad and a fluid composition that includes a chelating agent. The chelating agent is a water soluble multidentate chelating agent, preferably a water soluble bidentate ionic chelating agent, and more preferably 1,2-ethylenediphosphonic acid (EDP). A fluid composition for use in planarization of a surface of a wafer includes a chemically interactive component that interacts with the surface of the wafer and a chelating agent for reducing the metal ion contamination of the wafer during planarization. The chelating agent may be one of a water soluble multidentate chelating agent, preferably a water soluble bidentate ionic chelating agent, and more preferably 1,2-ethylenediphosphonic acid (EDP). Further, the fluid composition may include an abrasive component.
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Akiya et al., "Thin-Oxide Dielectric Strength Improvement by Adding a Phosphonic Acid Chelating Agent into NH.sub.4 OH-H.sub.2 O.sub.2 Solution," J. Electrochem. Soc., 141(10), L139-L142 (1994).
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Meikle Scott
Skrovan John
Goudreau George
Micro)n Technology, Inc.
Powell William
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