Semiconductor laser and method of manufacturing the same

Details Semiconductor laser and method of manufacturing the same Semiconductor laser and method of manufacturing the same

1994-02-15

1995-12-26

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 44, H01S 318

Patent

active

054794277

ABSTRACT:
In a semiconductor laser having a p-type cladding layer consisting of GaInP or AlGaInP, an operating voltage is decreased. In a semiconductor laser formed on a GaAs substrate and having a p-type cladding layer consisting of GaInP or AlGaInP and a p-type contact layer consisting of GaAs or GalnAs, p-type buffer layers are formed between the p-type cladding layer and the p-type contact layer, which consists of a compound containing both arsenic (As) and phosphorus (P) and having a medium bandgap between those of the two layers.

REFERENCES:
patent: 5105432 (1992-04-01), Murakami et al.
patent: 5146466 (1992-09-01), Hamada et al.
patent: 5146467 (1992-09-01), Kadowaki et al.
patent: 5222090 (1993-06-01), Serreze
patent: 5298762 (1994-03-01), Ou
Yoshida et al., AlGainP/GainAs Strained Quantum Well Lasers, Electronic Letters, Apr. 15, 1993, vol. 29, No. 8, pp. 654-655.
Katsuyama et al., OMPVE growth of AlGaInP/Ga.sub.x In.sub.1-x P strained quantum well structures and their applications to visible laser diodes, Journal of Crystal Growth 124 (1992) pp. 697-702. No month for reference.

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