Semiconductor laser device with integrated reflector on a (511)

Coherent light generators – Particular active media – Semiconductor

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372 50, H01S 318

Patent

active

054794269

ABSTRACT:
Radiating light from a semiconductor laser element is radiated in a direction normal to the surface of a photodetector substrate. The semiconductor laser element and photodetector are disposed on the same plane. Specifically, a reflecting mirror surface formed of a slanting surface of (111) lattice plane having a ridge line of <110> direction is disposed on a silicon substrate of (100) lattice plane having an off-angle of 4.degree. to 14.degree. about an axis of <110> direction or on a silicon substrate of (511) lattice plane having an off-angle of 1.degree. to 11.degree. about an axis of <110> direction. The semiconductor laser chip is disposed at a position opposing to the reflecting mirror surface.

REFERENCES:
patent: 4807238 (1989-02-01), Yokomori

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