Fishing – trapping – and vermin destroying
Patent
1994-12-27
1995-12-05
Quach, T. N.
Fishing, trapping, and vermin destroying
437 35, 437192, 437193, 437228, 1566531, H01L 21335, H01L 21311
Patent
active
054728959
ABSTRACT:
A method for manufacturing a transistor of a semiconductor device having a gate electrode smaller than the critical dimensions of a mask for a gate electrode by etching a polysilicon film for a gate electrode using an isotropic etching process and an anisotropic etching process utilizing a mask layer by forming the mask layer on the top of the polysilicon film for a gate electrode. This allows forming a gate electrode smaller than the critical dimensions by utilizing the prior art exposing apparatus; therefore, production costs for manufacturing the semiconductor can be reduced, and additionally, the manufacture of a highly integrated semiconductor device can be simplified by forming a gate electrode smaller than the critical dimensions.
REFERENCES:
patent: 4198250 (1980-04-01), Jecmen
patent: 4818715 (1989-04-01), Chao
patent: 5292675 (1994-03-01), Codama
patent: 5314832 (1994-05-01), Deleonibus
patent: 5320974 (1994-06-01), Hori et al.
patent: 5330925 (1994-07-01), Lee et al.
Jambotkar, C., "Process for Fabricating an LDD FET" IBM Tech. Disc. Bull., vol. 27, No. 7B, Dec. 1984, pp. 4164-4165.
Hyundai Electronics Industries Co,. Ltd.
Quach T. N.
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