Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1994-06-14

1995-12-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 48, 437 52, H01L 21266, H01L 218247

Patent

active

054728916

ABSTRACT:
This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carrier be easily generated and to improve writing efficiency.

REFERENCES:
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4992389 (1991-02-01), Ogura et al.
patent: 5340760 (1994-08-01), Komori et al.

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