Fishing – trapping – and vermin destroying
Patent
1988-02-25
1995-12-05
Nelson, Peter A.
Fishing, trapping, and vermin destroying
437913, 257 67, H01L 21265
Patent
active
054728886
ABSTRACT:
A depletion mode power MOSFET has a gate electrode formed of material that is refractory, or resistant, to high temperature encountered during device fabrication. A depletion channel region which is formed in a base region of a MOSFET and which interconnects the source and drain regions is formed after a high temperature drive to form the base region, but before a gate oxide and gate and source electrodes are formed at lower temperatures. The depletion channel region is thus subjected to reduced temperatures and grows only slightly in thickness, so that it can be easily depleted. The gate oxide, similarly, is subjected to reduced temperatures, and, particularly when made thin, exhibits high insensitivity to radiation exposure.
REFERENCES:
patent: 4532534 (1985-07-01), Ford et al.
Solid State Technology/Mar. 81, pp. 72-73 Low temperature Silicon Processing Techniques for VLSIC Fabrication.
VLSI Technology by S. M. Sze, 1983, p. 150 section 4.3.2 and pp. 358-361, section 9.2.4 and 9.2.6
Silicon Processing For The VLSI ERA by Wolf and Tauber, 1986 pp. 221-223 (Interface trap charge) and pp. 384-404 (Refractory metal).
International Rectifier Corporation
Nelson Peter A.
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