Method for designating/sorting semiconductor wafers according to

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156601, 436 4, 436136, G01N 2139, G01N 700

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active

048091960

ABSTRACT:
A method for marking/sorting semiconductor wafers in accordance with predicted values of oxygen precipitation in the wafers that will occur after the performance of a thermal process step. In a preferred embodiment, this oxygen precipitation prediction is obtained by means of a correlation equation

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Curtis & Verkuil, Amer. Soc. for Testing & Materials, A High Signal-To-Noise Osillator for Contactless Measurement of Photoinduced Carrier Lifetimes.
Ogita, J. Appl. Psy. vol. 19 (1980) No. 11 Contactless Measurement of Carrier Lifetime in Semiconductor Wafers by Use of Strip Lines.
Bio-Rad Notes 101, Apr. 1983, Reprinted from J. Elec. Chem. Soc. vol. 129, No. 7 July 1982--Method to Measure the Precipitated and Total Oxygen Concentration in Silicon.
Bio-Rad Notes 101--Apr. 1983--Method to Measure the Precipitated and Total Oxygen Concentration in Silicon, By L. Jastrzebski, et al.
Bio-Rad Notes No. 102 Apr. 1983, Precise and Rapid Measurement of Interstitial Oxygen Concentration in Silicon, by Krishnan.
Bio-Rad QS-100 Autofeed/Autoscan System.
Huber, et al. Early Stages of Oxygen Precipitation in CZ Silicon, Satelite Symposium. Ele. Chem. Soc. Essderc 82-Aggregation Phenomena of Point Defects in Silicon.
Hill-Detection of Latent Scratches and Swirl on Silicon Wafers by Scanned Surface Photoresponse. J. Appl. Psy. 51(8) Aug. 1980 pp. 4115-4118.

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