Semiconductor device having semiconductor-on-insulator structure

Details Semiconductor device having semiconductor-on-insulator structure Semiconductor device having semiconductor-on-insulator structure

1989-12-07

1991-11-19

Hille, Rolf

357 2, 357 4, 357 2345, H01L 2978

Patent

active

050669931

ABSTRACT:
A method of producing a semiconductor-on-insulator structure generates a first fixed charge in an insulator layer of a base substrate. An active substrate which is made of a semiconductor is bonded on the insulator layer of the base substrate to thereby generate a second fixed charge at an interface of the insulator layer and the active substrate. The first and second fixed charges have mutually opposite polarities. A portion of the active substrate is removed to form the active substrate to an arbitrary thickness.

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DiMaria et al., "Location of Trapped Charge in Aluminium-Implanted SiO.sub.2 ", IBM J. Res. Develop. vol. 22, No. 3, May 1978.
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Lasky et al., "Silicon-On-Insulator (SOI) by Bonding and Etch-Back", IEDM 85, pp. 684-687 1985.
Hamaguchi et al., "Novel LSI/SOI Wafer Fabrication Using Device Layer Transfer Technique", IEDM 85, pp. 688-691 1985 Simply Relate to Studies on SOI Structions.

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