Insulated gate device

Details Insulated gate device Insulated gate device

1985-09-30

1989-02-28

Edlow, Martin H.

357 238, 357 2314, 357 86, H01L 2978, H01L 4900

Patent

active

048090450

ABSTRACT:
An insulated gate device includes at least one cell having base and emitter region surfaces disposed in ohmic contact with a metallic emitter electrode. The cell is constructed to provide a larger ratio of base region surface area to emitter region surface area in contact with the emitter electrode than is found in the prior art. The cell is further constructed to provide paths for reverse current flow from a drift region through the base region and to the emitter electrode; these paths being spaced form the cell's emitter-base junction.

REFERENCES:
patent: 4345265 (1982-08-01), Blanchard
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4402003 (1983-08-01), Blanchard
patent: 4417385 (1983-11-01), Temple
patent: 4443931 (1984-04-01), Baliga et al.
patent: 4587713 (1986-05-01), Goodman et al.

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