Method for manufacturing a vertical, grooved MOSFET

Details Method for manufacturing a vertical, grooved MOSFET Method for manufacturing a vertical, grooved MOSFET

1982-02-22

1983-02-22

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29578, 148187, H01L 2122

Patent

active

043744559

ABSTRACT:
A MOSFET device having minimized parasitic bipolar effects comprises a substrate having a surface at which source and drain regions are spaced so as to define a channel portion in a body region. The channel portion is formed in a relatively low conductivity portion of the body region, the remainder of the body region being of higher conductivity. A gate overlies the channel portion, and a method for automatically aligning the gate to a grooved MOSFET is described.

REFERENCES:
patent: 4055884 (1977-11-01), Jambotkar
patent: 4065783 (1977-12-01), Ouyang
patent: 4084175 (1978-04-01), Ouyang
patent: 4105475 (1978-08-01), Jenne
patent: 4116720 (1978-09-01), Vinson
patent: 4131907 (1978-12-01), Ouyang
patent: 4145703 (1979-03-01), Blanchard et al.
patent: 4200968 (1980-05-01), Schroeder
patent: 4206005 (1980-06-01), Yeh et al.
patent: 4244752 (1981-01-01), Henderson et al.
patent: 4272302 (1981-06-01), Jhabvala
Grooves Add New Dimension To V-Mos Structure and Performance, F. B. Jenne, Electronics, Aug. 18, 1977, pp. 100-106.

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