Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1980-12-22

1983-02-22

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 148187, H01L 2122

Patent

active

043744540

ABSTRACT:
A method is disclosed for providing in a self-registering manner underpasses in a semiconductor device having insulated gate field effect transistors, in which the underpasses below the field oxide connect electrode zones of the field effect transistors together. A first part of field oxide is obtained by local oxidation by means of an oxidation mask. After a first oxidation treatment, a part of the oxidation mask is removed and the semiconductor body is doped locally with As or Sb atoms for the underpasses. The aperture in the doping mask coincides substantially with the part of the oxidation mask removed. This avoids critical alignment in that the masking effect of the first part of the field oxide is used. After the doping treatment, a second oxidation treatment, is carried out to complete the field oxide.

REFERENCES:
patent: 4023195 (1977-05-01), Richman
patent: 4101344 (1978-07-01), Kodi
patent: 4268950 (1981-05-01), Chatterjee et al.
patent: 4277291 (1981-07-01), Cerofolini et al.
patent: 4290184 (1981-09-01), Kuo

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1369864