1987-11-10
1989-02-14
James, Andrew J.
357 16, 357 234, 357 56, H01L 29205, H01L 2980
Patent
active
048050032
ABSTRACT:
A vertical III-V compound MESFET is provided. The MESFET has a buried P-type layer which separates the source and the drain regions. A small N-type region in the buried P layer connects the source channel to the drain area. This opening in the buried P layer is located underneath the Schottky gate.
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patent: 4561168 (1985-12-01), Pitzer et al.
patent: 4568958 (1986-02-01), Baliga
patent: 4587540 (1986-05-01), Jackson
patent: 4624004 (1986-11-01), Calviello
patent: 4636823 (1987-01-01), Margalit
patent: 4746960 (1988-05-01), Valeri et al.
Holm Paige M.
Moyer Curtis D.
Barbee Joe E.
Jackson, Jr. Jerome
James Andrew J.
Motorola Inc.
Wolin Harry A.
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