Multilayer thin-film for magnetoresistive device

Details Multilayer thin-film for magnetoresistive device Multilayer thin-film for magnetoresistive device

1996-01-16

1999-04-06

Nguyen, Nam

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428611, 428672, 428673, 428675, 428692, 428680, 428928, B32B 1500

Patent

active

058915869

ABSTRACT:
A multilayer thin-film structure comprises at least one layered structure formed by depositing a nonmagnetic layer, a first ferromagnetic layer of a ferromagnetic metal or alloy having a positive saturation magnetostriction constant, a nonmagnetic layer and a ferromagnetic layer of a ferromagnetic metal or alloy having a negative saturation magnetostriction constant in that order, and a uniaxial stress is induced in the multilayer thin-film structure. The multilayer thin-film structure for magnetoresistive devices, comprises the magnetic layers which could not have been used for forming the prior art structures and having similar compositions which could not have been used for forming the prior art structure, has an MR ratio in the range of 10 to 20%, does not need the use of antiferromagnetic materials unsatisfactory in corrosion resistance and environment resistance, does not require the turning of a magnetic field when forming the thin films and does not require expensive manufacturing systems.

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