Radiant energy – Photocells; circuits and apparatus – Optical or pre-photocell system
Patent
1987-02-26
1989-02-28
Westin, Edward P.
Radiant energy
Photocells; circuits and apparatus
Optical or pre-photocell system
35821311, 357 30, H01J 4014
Patent
active
048088340
ABSTRACT:
A CSD type solid-state image sensor comprises an n-type semiconductor substrate (10), p-type impurity regions (20, 30, 40) formed thereon spaced apart from each other, a photodetector portion (21) formed on the p-type impurity region (20), a transfer gate selecting circuit (700) formed on the p-type impurity region (30) and a vertical charge transfer device driving circuit (800) formed on the p-type impurity region (40). The photodetector portion (21) comprises a photodetector (101), a transfer gate (7) and a vertical charge transfer device (8), and the transfer gate (7) and the vertical charge transfer device (8) have a common gate electrode (201). The potential in the p-type impurity region (20) is set to -V.sub.PW by a power supply (50), while the potential in the p-type impurity regions (30, 40) is set to -V.sub.SW (V.sub.PW <V.sub.SW) by a power supply (60). The voltage at an "L" level of a driving signal applied from the vertical charge transfer device driving circuit (800) to the gate electrode (201) is negative by .vertline.V.sub.SW -V.sub.PW .vertline., so that an absolute value of the voltage at an "H" level can be reduced. Thus, an absolute value of the threshold voltage of the transfer gate (7) can also be set to be smaller.
REFERENCES:
patent: 4651015 (1987-03-01), Nishizawa et al.
patent: 4678938 (1987-07-01), Nakamura
ISSCC, Technical Digest, 1985, pp. 100-101, "A 480.times.400 Element Image Sensor with a Charge Sweep Device" by M. Kimata et al.
"A New Organization Area Image Sensor With CCD Readout Through Charge Priming Transfer", Sumio Terakawa et al., IEEE Electron Device Leters, vol. EDL-1, No. 5, May 1980, pp. 86-88.
Mitsubishi Denki & Kabushiki Kaisha
Shami Khaled
Westin Edward P.
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