Fishing – trapping – and vermin destroying
Patent
1994-12-07
1995-12-26
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
148DIG95, H01L 2120
Patent
active
054787750
ABSTRACT:
A semiconductor laser diode of a ridge type includes a double heterostructure in which a cladding layer is formed in a mesa stripe form and a current block layer which selectively buries mesa side and bottom surfaces of the cladding layer. For fabrication, a first step is to grow, sequentially above a substrate, a second cladding layer, an active layer, a first cladding layer and a cap layer. A second step is to etch the first cladding layer and the cap layer respectively in mesa stripe forms. A third step is to selectively grow current blocking layer on the first cladding layer by a metalorganic vapor phase epitaxy process. A fourth step is to grow contact layers respectively on surfaces of the current blocking layer and the cap layer. In the third step, a gas in which HCl is mixed in a concentration within a range of 0.2.about.2 in a (HCl)/(III gas) ratio is used, which enhances re-evaporation of material on a selective mask. Thus, the protrusion formed in the current blocking layer at each of the mesa side surfaces can be suppressed to a thickness not larger than 10% of a thickness of the current blocking layer at its flat portion. In this way, the stress caused by lattice mismatch at the mesa side portions can be suppressed.
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Breneman R. Bruce
Fleck Linda J.
NEC Corporation
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