Method for producing patterning alignment marks in oxide

Details Method for producing patterning alignment marks in oxide Method for producing patterning alignment marks in oxide

1995-03-16

1995-12-26

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 10, 148DIG24, H01L 218238

Patent

active

054787629

ABSTRACT:
A process for fabricating MOSFET devices, in which a denuded zone in silicon has been created during the normal process sequence, has been developed. In order to avoid the formation of deleterious oxygen precipitates, prior to the creation of the denuded zone, low temperature processing had to be used. Low temperature insulator depositions were used for the alignment mark formation, as well as for the fill for the field oxide regions. Subsequently, high temperature well formation activation anneals, resulted in the creation of the denuded zone, and thus removed the low temperature restriction for the remaining processing steps.

REFERENCES:
patent: 4548654 (1985-10-01), Tobin
patent: 4661166 (1987-04-01), Hirao
patent: 5094963 (1992-03-01), Hiraguchi et al.
patent: 5194395 (1993-03-01), Wada

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