Method of producing semiconductor device having first and second

Details Method of producing semiconductor device having first and second Method of producing semiconductor device having first and second

1993-07-06

1995-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 28, 437 57, 437 59, 437 61, 437 63, 437 70, 437 74, 257274, 257338, 257351, 257509, 257544, 257929, H01L 21265

Patent

active

054787610

ABSTRACT:
A complementary field effect element develops an intensified latch-up preventive property even if the distance between the emitters of parasitic transistors is short, and a method of producing the same are disclosed. The complementary field effect element includes a high concentration impurity layer (16) formed by ion implantation in the boundary region between a P-well (2) and an N-well (3) which are formed adjacent each other on the main surface of a semiconductor substrate (1). Therefore, carriers passing through the boundary region between the P-well (2) and the N-well (3) are decreased, so that even if the distance between the emitters (4, 5) of parasitic transistors is short, there is obtained an intensified latch-up preventive property.

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Cheung et al., "Buried Dopant and Defect Layers For Device Structures With High-Energy Ion Implantation", Nuclear Instruments and Methods in Physics Research, 1989.

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