Method of making a getterer for multi-layer wafers

Details Method of making a getterer for multi-layer wafers Method of making a getterer for multi-layer wafers

1994-06-03

1995-12-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 12, 437 61, 148DIG50, H01L 21306

Patent

active

054787580

ABSTRACT:
A method of making a gettering structure for dielectrically isolated wafer structures, such as bonded wafers. A getterer layer is deposited over the wafer having semiconductor regions isolated from each other by trenches. The polysilicon is etched back leaving the polysilicon on the sides of the regions. The polysilicon may be doped. The polysilicon is oxidized and a second layer of polysilicon may be deposited to fill voids in the trenches.

REFERENCES:
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4631804 (1986-12-01), Roy
patent: 4661202 (1987-04-01), Ochii
patent: 5059550 (1991-10-01), Tateoka ewt al.
patent: 5084408 (1992-01-01), Baba et al.
patent: 5116779 (1992-05-01), Iguchi
patent: 5272104 (1993-12-01), Schrantz et al.
patent: 5290716 (1994-03-01), Nakamura
patent: 5294562 (1994-03-01), Lur et al.
patent: 5306942 (1994-04-01), Fujii
Wolf et al., vol. I, Silicon Processing For the VLSI Era, Lattice Press, 1986.

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