Injector for reactor

Details Injector for reactor Injector for reactor

1998-05-05

1999-04-06

Bueker, Richard

Coating apparatus

Gas or vapor deposition

C23C 1600

Patent

active

058912509

ABSTRACT:
A reactor for depositing an epitaxial layer on a semiconductor wafer contained within the reactor during a chemical vapor deposition process. The reactor comprises a reaction chamber sized and shaped for receiving a semiconductor wafer and an inlet passage in communication with the reaction chamber for delivering reactant gas to the reaction chamber. In addition the reactor includes a susceptor positioned in the reaction chamber for supporting the semiconductor wafer during the chemical vapor deposition process. Further, the reactor comprises an injector including a metering plate generally blocking reactant gas flow through the inlet passage. The plate has a slot extending through the plate totally within a periphery of the plate. The slot is sized for selectively restricting reactant gas flow past the plate thereby to meter reactant gas delivery to the chamber.

REFERENCES:
patent: 5269847 (1993-12-01), Anderson et al.
patent: 5411590 (1995-05-01), Hawkins et al.
patent: 5421288 (1995-06-01), Ohta et al.
patent: 5455070 (1995-10-01), Anderson et al.
patent: 5458918 (1995-10-01), Hawkins et al.
patent: 5525157 (1996-06-01), Hawkins et al.

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