Fishing – trapping – and vermin destroying
Patent
1987-11-23
1989-02-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
148DIG9, 148DIG124, 148DIG10, 148DIG11, 437 31, 437 32, 437 33, 437 44, 437 56, 437 67, 437200, 437201, 437202, 357 43, 357 59, H01L 2170, H01L 2700, H01L 21265
Patent
active
048085480
ABSTRACT:
An improved integrated circuit structure is disclosed comprising bipolar and MOS devices formed on the same substrate. The bipolar devices have at least the emitter and the collector contact portions formed from a polysilicon layer which results in raised contacts. The MOS devices are similarly formed with raised gate contact portions formed from the same polysilicon layer. Metal silicide is formed over at least a portion of the base, source, and drain regions to provide conductive paths to the base, source, and drain contacts. In one embodiment, the base, source, and drain contacts are also formed from the same polysilicon layer to permit formation of a highly planarized structure with self-aligned contacts formed by planarizing an insulating layer formed over the structure sifficiently to expose the upper surface of the contacts.
REFERENCES:
patent: 4475279 (1984-10-01), Gahle
patent: 4727046 (1988-02-01), Tuntasood et al.
patent: 4734382 (1988-03-01), Krishna
patent: 4735911 (1988-04-01), Schaber
patent: 4746963 (1988-05-01), Uchida et al.
Thomas Mammen
Weinberg Matthew
Advanced Micro Devices , Inc.
Hearn Brian E.
Taylor John P.
Wilczewski Mary
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