Method of fabrication of high voltage IC bopolar transistors ope

Details Method of fabrication of high voltage IC bopolar transistors ope Method of fabrication of high voltage IC bopolar transistors ope

1987-12-09

1989-02-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, 437911, 437 31, 148DIG88, 148DIG10, 357 43, 357 22, H01L 2170

Patent

active

048085472

ABSTRACT:
A high voltage bipolar and JFET have their gate and base connected and source and collector connected and the appropriate geometry for the bipolar to operate to its BV.sub.CBO limit. The collector and channel regions have the same depth and impurity concentration, the base and top gate regions have the same depth and impurity concentration and the emitter and source and drain regions have the same depth and impurity concentration.

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