Method of forming silicon and aluminum containing dielectric fil

Details Method of forming silicon and aluminum containing dielectric fil Method of forming silicon and aluminum containing dielectric fil

1987-10-05

1989-02-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 42, 437195, 20419222, 20419223, 357 54, H01L 21473

Patent

active

048046400

ABSTRACT:
A process of forming a three region dielectric film on silicon and a semiconductor device employing such a film are disclosed. Silicon is oxidized in an oxygen-containing ambient. The oxidation step forms a first region of silicon oxide. Once oxidation has begun, reactive sputtering of aluminum in an oxygen plasma is initiated. This forms a second region of said dielectric film which comprises a mixture of silicon and aluminum oxides. A third region comprising substantially aluminum oxide is formed by the continuing reactive sputtering step.
A semiconductor device comprising said three region dielectric film interposed between an electrode and a semiconductor body has little or no shift in threshold voltage providing good stability and can be fabricated in substantially less time and/or at lower temperatures than prior art methods.

REFERENCES:
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patent: 4268711 (1981-05-01), Gurev
patent: 4409260 (1983-10-01), Pastor et al.
patent: 4510172 (1985-04-01), Ray
patent: 4566173 (1986-01-01), Gossler et al.
ABOAF, IBM Tech. Disc. Bull., vol. 9, No. 4 (Sep. 1966).
Burkhardt, IBM Tech. Disc. Bull., vol. 10, No. 2 (Jul. 1967), p. 160.

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