Method of making a DH laser with strained layers by MBE

Details Method of making a DH laser with strained layers by MBE Method of making a DH laser with strained layers by MBE

1987-11-04

1989-02-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG72, 148DIG95, 148DIG97, 148DIG169, 148 331, 148 335, 156612, 357 17, 372 45, 437107, 437128, 437133, 437969, H01L 21306

Patent

active

048046396

ABSTRACT:
A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition In.sub.y Ga.sub.1-y As on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.

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